This product listing is for the part SI5908DC-T1-GE3, manufactured by Vishay, and is a Transistor MOSFET Array Dual N-CH 20V 4.4A 8-Pin Chip FET T/R.

This product is currently out of stock.

Returns are accepted within 30 days if the item(s) received are not what was ordered or are broken.

Part Specifications:
- Case/Package: SMD/SMT
- Continuous Drain Current (ID): 4.4 A
- Drain to Source Breakdown Voltage: 20 V
- Drain to Source Resistance: 40 mΩ
- Drain to Source Voltage (Vdss): 20 V
- Element Configuration: Dual
- Fall Time: 12 ns
- Gate to Source Voltage (Vgs): 8 V
- Lead Free: Lead Free
- Max Operating Temperature: 150 °C
- Max Power Dissipation: 1.1 W
- Min Operating Temperature: -55 °C
- Mount: Surface Mount
- Number of Channels: 2
- Number of Pins: 8
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Rds On Max: 40 mΩ
- Rise Time: 36 ns
- Schedule B: 8541290080
- Turn-Off Delay Time: 30 ns
- Turn-On Delay Time: 20 ns
- Weight: 84.99187 mg

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Vishay

SI5908DC-T1-GE3

SMD/SMT

Transistor MOSFET Array Dual N-CH 20V 4.4A 8-Pin Chip FET T/R

Specifications

Physical

Case/Package

SMD/SMT

Mount

Surface Mount

Number of Pins

8

Weight

84.99187 mg

Compliance

Lead Free

Lead Free

Radiation Hardening

No

Technical

Continuous Drain Current (ID)

4.4 A

Drain to Source Breakdown Voltage

20 V

Drain to Source Resistance

40 mΩ

Drain to Source Voltage (Vdss)

20 V

Element Configuration

Dual

Fall Time

12 ns

Gate to Source Voltage (Vgs)

8 V

Max Operating Temperature

150 °C

Max Power Dissipation

1.1 W

Min Operating Temperature

-55 °C

Number of Channels

2

Packaging

Tape & Reel (TR)

Rds On Max

40 mΩ

Rise Time

36 ns

Schedule B

8541290080

Turn-Off Delay Time

30 ns

Turn-On Delay Time

20 ns

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