This product listing is for the part TK6R9P08QM, manufactured by Toshiba, and is a N-channel power MOSFET, 80V, 6.9mΩ on-resistance, DPAK package.

This product is currently out of stock.

Returns are accepted within 30 days if the item(s) received are not what was ordered or are broken.

Part Specifications:
- Continuous Drain Current (ID): 62 A
- Drain to Source Resistance: 6.9 mΩ
- Lifecycle Status: Production
- Max Operating Temperature: 175 °C
- Max Power Dissipation: 89 W
- Min Breakdown Voltage: 80 V
- Number of Elements: 1
- Number of Terminals: 2
- RoHS: Compliant

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Toshiba

TK6R9P08QM

N-channel power MOSFET, 80V, 6.9mΩ on-resistance, DPAK package

Specifications

Physical

Number of Terminals

2

Compliance

RoHS

Compliant

Technical

Continuous Drain Current (ID)

62 A

Drain to Source Resistance

6.9 mΩ

Max Operating Temperature

175 °C

Max Power Dissipation

89 W

Min Breakdown Voltage

80 V

Number of Elements

1

Supply Chain

Lifecycle Status

Production

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