This product listing is for the part FPD750SOT343E, manufactured by Qorvo (formerly RF Micro Devices / RFMD), and is a Packaged depletion‑mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) in a 4‑lead plastic package intended for low‑noise, high‑linearity S‑band RF amplification..
We have 6 units in-stock and ready to ship from United States for $2.38 USD per unit (Warehouse Certifications: ISO 9001:2015).
3-5 day shipping is free with the purchase of 43 unit(s) or more (Free domestic shipping on orders over $100).
Returns are accepted within 30 days if the item(s) received are not what was ordered or are broken.
Part Specifications:
- Device type: pseudomorphic HEMT (pHEMT), depletion mode
- Material/technology: AlGaAs/InGaAs on GaAs
- Polarity: N‑channel (depletion)
- Intended frequency band: S‑band (radio frequencies around S‑band as indicated in datasheet)
- Small‑signal gain (SSG): 16.5 to 18 dB
- Noise figure (minimum): 0.5 to 0.6 dB
- Output IP3: 37 to 39 dBm
- Output power (P1dB): 20 (typical) dBm
- Power‑added efficiency (PAE): 55 percent
- RoHS compliance: RoHS compliant (Directive 2002/95/EC)
- Package/JEDEC code: 4‑lead plastic package (JESD‑30 code R‑PDSO‑G4 / SOT‑343 style packaging listed)
- Number of elements/terminals: 1 element, 4 terminals count
*Image shown is a reference only, please refer to your part number.
Qorvo (formerly RF Micro Devices / RFMD)
FPD750SOT343E
Packaged depletion‑mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) in a 4‑lead plastic package intended for low‑noise, high‑linearity S‑band RF amplification.
Specifications
Physical
Package/JEDEC code
4‑lead plastic package (JESD‑30 code R‑PDSO‑G4 / SOT‑343 style packaging listed)
Number of elements/terminals
1 element, 4 terminals count
Compliance
RoHS compliance
RoHS compliant (Directive 2002/95/EC)
Technical
Device type
pseudomorphic HEMT (pHEMT), depletion mode
Material/technology
AlGaAs/InGaAs on GaAs
Polarity
N‑channel (depletion)
Intended frequency band
S‑band (radio frequencies around S‑band as indicated in datasheet)
Small‑signal gain (SSG)
16.5 to 18 dB
Noise figure (minimum)
0.5 to 0.6 dB
Output IP3
37 to 39 dBm
Output power (P1dB)
20 (typical) dBm
Power‑added efficiency (PAE)
55 percent
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Availability
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Stock
Price
Quantity
Ships from
United States
Ships in
3-5 Days
Stock
6
units
United States
Warehouse
GdkXYI
Certifications
ISO 9001:2015
Price
$2.38
/unit
3-5 Days
MOQ:
1 unit
Minimum Order Quantity
The minimum amount required to make a purchase.
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