Diodes Incorporated
MMBT3904-7-F
SOT-23
This product listing is for the part MMBT3904-7-F, manufactured by Diodes Incorporated, and is a NPN epitaxial silicon transistor, 40V 200mA SOT-23 package.
This product is currently out of stock.
Returns are accepted within 30 days if the item(s) received are not what was ordered or are broken.
Part Specifications:
- Case/Package: SOT-23
- China RoHS: Compliant
- Collector Base Voltage (VCBO): 60 V
- Collector Emitter Breakdown Voltage: 40 V
- Collector Emitter Saturation Voltage: 300 mV
- Collector Emitter Voltage (VCEO): 40 V
- Contact Plating: Tin
- Continuous Collector Current: 200 mA
- Element Configuration: Single
- Emitter Base Voltage (VEBO): 6 V
- Frequency: 300 MHz
- Gain Bandwidth Product: 300 MHz
- Height: 1.1 mm
- hFE Min: 30
- Lead Free: Lead Free
- Length: 3.05 mm
- Lifecycle Status: Production
- Max Breakdown Voltage: 40 V
- Max Collector Current: 200 mA
- Max Frequency: 300 MHz
- Max Junction Temperature (Tj): 150 °C
- Max Operating Temperature: 150 °C
- Max Power Dissipation: 350 mW
- Min Operating Temperature: -55 °C
- Mount: Surface Mount
- Number of Elements: 1
- Number of Pins: 3
- Number of Terminals: 3
- Packaging: Cut Tape
- Polarity: NPN
- Power Dissipation: 310 mW
- Radiation Hardening: No
- REACH SVHC: Yes
- RoHS: Compliant
- Schedule B: 8541210080
- Transition Frequency: 300 MHz
- Voltage Rating (DC): 40 V
- Weight: 7.994566 mg
- Width: 1.4 mm
*Image shown is a reference only, please refer to your part number.
Have a question about this product?
SOT-23
Free domestic shipping on orders over $100!
Out of Stock
This product is currently sold out.
We accept Visa, Mastercard, American Express, and more! Taxes are calculated at checkout.