This product listing is for the part MMBT3904-7-F, manufactured by Diodes Incorporated, and is a NPN epitaxial silicon transistor, 40V 200mA SOT-23 package.
We have 51,418 units in-stock and ready to ship from United States for $0.01 USD per unit (Warehouse Certifications: ISO 9001:2015).
3-5 day shipping is free with the purchase of 9,421 unit(s) or more (Free domestic shipping on orders over $100).
Returns are accepted within 30 days if the item(s) received are not what was ordered or are broken.
Part Specifications:
- Case/Package: SOT-23
- China RoHS: Compliant
- Collector Base Voltage (VCBO): 60 V
- Collector Emitter Breakdown Voltage: 40 V
- Collector Emitter Saturation Voltage: 300 mV
- Collector Emitter Voltage (VCEO): 40 V
- Contact Plating: Tin
- Continuous Collector Current: 200 mA
- Element Configuration: Single
- Emitter Base Voltage (VEBO): 6 V
- Frequency: 300 MHz
- Gain Bandwidth Product: 300 MHz
- Height: 1.1 mm
- hFE Min: 30
- Lead Free: Lead Free
- Length: 3.05 mm
- Lifecycle Status: Production
- Max Breakdown Voltage: 40 V
- Max Collector Current: 200 mA
- Max Frequency: 300 MHz
- Max Junction Temperature (Tj): 150 °C
- Max Operating Temperature: 150 °C
- Max Power Dissipation: 350 mW
- Min Operating Temperature: -55 °C
- Mount: Surface Mount
- Number of Elements: 1
- Number of Pins: 3
- Number of Terminals: 3
- Packaging: Cut Tape
- Polarity: NPN
- Power Dissipation: 310 mW
- Radiation Hardening: No
- REACH SVHC: Yes
- RoHS: Compliant
- Schedule B: 8541210080
- Transition Frequency: 300 MHz
- Voltage Rating (DC): 40 V
- Weight: 7.994566 mg
- Width: 1.4 mm
*Image shown is a reference only, please refer to your part number.
Diodes Incorporated
MMBT3904-7-F
SOT-23
NPN epitaxial silicon transistor, 40V 200mA SOT-23 package
Specifications
Physical
Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Weight
7.994566 mg
Compliance
China RoHS
Compliant
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Yes
RoHS
Compliant
Technical
Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
40 V
Continuous Collector Current
200 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
300 MHz
Gain Bandwidth Product
300 MHz
hFE Min
30
Max Breakdown Voltage
40 V
Max Collector Current
200 mA
Max Frequency
300 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
350 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Cut Tape
Polarity
NPN
Power Dissipation
310 mW
Schedule B
8541210080
Transition Frequency
300 MHz
Voltage Rating (DC)
40 V
Dimensions
Height
1.1 mm
Length
3.05 mm
Width
1.4 mm
Supply Chain
Lifecycle Status
Production
FAQs
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Availability
All stock is new and certified authentic, shipping directly from a verified manufacturer.
Ships from
United States
Ships in
3-5 Days
Stock
51,418
units
United States
Warehouse
d14Iuc
Certifications
ISO 9001:2015
Price
$0.01
/unit
3-5 Days
MOQ:
51418 units
Minimum Order Quantity
The minimum amount required to make a purchase.
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