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Diodes Incorporated - DMP3010LK3Q-13

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Diodes Incorporated

DMP3010LK3Q-13

TO-252-3

P-channel enhancement mode power MOSFET with 30V drain-source voltage rating and 17A continuous drain current, utilizing trench DMOS technology for low on-resistance and fast switching performance.

Specifications

Physical

Case/Package
TO-252-3
Mount
Surface Mount
Number of Terminals
2

Compliance

China RoHS
Non-Compliant
REACH SVHC
No
RoHS
Compliant

Technical

Continuous Drain Current (ID)
14.5 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
10.2 mΩ
Drain to Source Voltage (Vdss)
30 V
Fall Time
99.3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
6.234 nF
Max Operating Temperature
150 °C
Max Power Dissipation
3.4 W
Military Standard
MIL-STD-202
Min Breakdown Voltage
30 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel (TR)
Rds On Max
8 mΩ
Rise Time
9.4 ns
Turn-Off Delay Time
260.7 ns
Turn-On Delay Time
11.4 ns

Supply Chain

Export Control Classification Number (ECCN) Code
EAR99
Introduction Date
2012-03-06
Lifecycle Status
NRND

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Availability

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Ships from

United States

United States

Ships in

3-5 Days

Stock

24,973

units

United States

Warehouse

d14Iuc

Certifications

ISO 9001:2015

Price

$0.42

/unit

3-5 Days

MOQ:

2381 units

Minimum Order Quantity

The minimum amount required to make a purchase.

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