Diodes Incorporated
DMP3010LK3Q-13
TO-252-3
This product listing is for the part DMP3010LK3Q-13, manufactured by Diodes Incorporated, and is a P-channel enhancement mode power MOSFET with 30V drain-source voltage rating and 17A continuous drain current, utilizing trench DMOS technology for low on-resistance and fast switching performance..
This product is currently out of stock.
Returns are accepted within 30 days if the item(s) received are not what was ordered or are broken.
Part Specifications:
- Case/Package: TO-252-3
- China RoHS: Non-Compliant
- Continuous Drain Current (ID): 14.5 A
- Drain to Source Breakdown Voltage: -30 V
- Drain to Source Resistance: 10.2 mΩ
- Drain to Source Voltage (Vdss): 30 V
- Export Control Classification Number (ECCN) Code: EAR99
- Fall Time: 99.3 ns
- Gate to Source Voltage (Vgs): 20 V
- Input Capacitance: 6.234 nF
- Introduction Date: 2012-03-06
- Lifecycle Status: NRND
- Max Operating Temperature: 150 °C
- Max Power Dissipation: 3.4 W
- Military Standard: MIL-STD-202
- Min Breakdown Voltage: 30 V
- Min Operating Temperature: -55 °C
- Mount: Surface Mount
- Number of Channels: 1
- Number of Elements: 1
- Number of Terminals: 2
- Packaging: Tape & Reel (TR)
- Rds On Max: 8 mΩ
- REACH SVHC: No
- Rise Time: 9.4 ns
- RoHS: Compliant
- Turn-Off Delay Time: 260.7 ns
- Turn-On Delay Time: 11.4 ns
*Image shown is a reference only, please refer to your part number.
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TO-252-3
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