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Diodes Incorporated - DMG2301L-7

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Diodes Incorporated

DMG2301L-7

TO-236-3

P-channel enhancement mode MOSFET, 20V, 3A, SOT-23 package

Specifications

Physical

Case/Package
TO-236-3
Mount
Surface Mount
Number of Terminals
3

Compliance

China RoHS
Compliant
REACH SVHC
Yes
RoHS
Compliant

Technical

Continuous Drain Current (ID)
3 A
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
120 mΩ
Drain to Source Voltage (Vdss)
-20 V
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
476 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.5 W
Military Standard
MIL-STD-202
Min Breakdown Voltage
20 V
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
1.5 W
Rds On Max
120 mΩ
Turn-Off Delay Time
30 ns
Turn-On Delay Time
5 ns

Dimensions

Height
1.1 mm

Supply Chain

Lifecycle Status
Production

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Materialize (Harper AI, Inc.)

1288 McAllister St - San Francisco, CA 94115