This product listing is for the part DGD2005S8-13, manufactured by Diodes Incorporated, and is a Half-bridge gate driver IC for driving N-channel MOSFETs with 200V rating, dual high-side and low-side outputs, and integrated shoot-through prevention logic in an 8-pin SOIC package..

This product is currently out of stock.

Returns are accepted within 30 days if the item(s) received are not what was ordered or are broken.

Part Specifications:
- China RoHS: Compliant
- Export Control Classification Number (ECCN) Code: EAR99
- Height - Seated (Max): 1.75 mm
- Harmonized Tariff Schedule (HTS) Code: 8542.39.00.60
- Introduction Date: 2018-10-19
- Length: 4.9 mm
- Lifecycle Status: Production
- Max Operating Temperature: 125 °C
- Max Supply Current: 180 µA
- Max Supply Voltage: 20 V
- Min Operating Temperature: -40 °C
- Min Supply Voltage: 10 V
- Number of Channels: 1
- Number of Circuits: 1
- Number of Terminals: 8
- Operating Supply Voltage: 15 V
- REACH SVHC: Yes
- RoHS: Compliant
- Terminal Pitch: 1.27 mm
- Width: 3.9 mm

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Diodes Incorporated

DGD2005S8-13

Half-bridge gate driver IC for driving N-channel MOSFETs with 200V rating, dual high-side and low-side outputs, and integrated shoot-through prevention logic in an 8-pin SOIC package.

Specifications

Physical

Number of Terminals

8

Compliance

China RoHS

Compliant

REACH SVHC

Yes

RoHS

Compliant

Technical

Max Operating Temperature

125 °C

Max Supply Current

180 µA

Max Supply Voltage

20 V

Min Operating Temperature

-40 °C

Min Supply Voltage

10 V

Number of Channels

1

Number of Circuits

1

Operating Supply Voltage

15 V

Dimensions

Height - Seated (Max)

1.75 mm

Length

4.9 mm

Terminal Pitch

1.27 mm

Width

3.9 mm

Supply Chain

Export Control Classification Number (ECCN) Code

EAR99

Harmonized Tariff Schedule (HTS) Code

8542.39.00.60

Introduction Date

2018-10-19

Lifecycle Status

Production

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